CHM210BGP MOSFET Transistor

The CHM210BGP is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the CHM210BGP transistor as follows.

CHM210BGP Transistor Specification

Transistor Code		CHM210BGP
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOT-346
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	1.3A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.24Ohm
Power Dissipation (Maximum)	PD	0.75W
Drain-Source Capacitance		80pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		330nS
Gate-Threshold Voltage (Maximum)		2V
Total Gate Charge		15nC

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