CHM2331GP MOSFET Transistor

The CHM2331GP is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the CHM2331GP transistor as follows.

CHM2331GP Transistor Specification

Transistor Code		CHM2331GP
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SOT-346
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	8V
Drain Current (Maximum)	ID	4.2A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.048Ohm
Power Dissipation (Maximum)	PD	1.25W
Drain-Source Capacitance		220pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		9nS
Gate-Threshold Voltage (Maximum)		0.9V
Total Gate Charge		10nC

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