T1600GB45G IGBT Transistor

The T1600GB45G is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the T1600GB45G transistor as follows.

T1600GB45G Transistor Specification

Transistor Code		T1600GB45G
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package
Collector Power Dissipation (Maximum)	Pc	12800W
Collector-Emitter Voltage (Maximum)	VCE	4500V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2.75V
Collector Current (Maximum)	IC	1600A
Operating Junction Temperature (Maximum)		125 oC
Rise Time		4400

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