NGTB15N135IHR IGBT Transistor

The NGTB15N135IHR is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the NGTB15N135IHR transistor as follows.

NGTB15N135IHR Transistor Specification

Transistor Code		NGTB15N135IHR
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO247
Collector Power Dissipation (Maximum)	Pc	357W
Collector-Emitter Voltage (Maximum)	VCE	1350V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2.15V
Collector Current (Maximum)	IC	15A
Operating Junction Temperature (Maximum)		175 oC
Collector Capacitance		87

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