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IXGH12N60CD1 IGBT Transistor

The IXGH12N60CD1 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXGH12N60CD1 transistor as follows.

Circuit diagram symbol of the IXGH12N60CD1 transistor

IXGH12N60CD1 Transistor Specification

Transistor Code IXGH12N60CD1
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO247
Collector-Emitter Voltage (Maximum) VCE 600V
Collector Current (Maximum) IC 24A
Operating Junction Temperature (Maximum) 150 oC
Rise Time 120

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