VS-GT100TP60N IGBT Transistor

The VS-GT100TP60N is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the VS-GT100TP60N transistor as follows.

VS-GT100TP60N Transistor Specification

Transistor Code		VS-GT100TP60N
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		INT-A-PAK
Collector Power Dissipation (Maximum)	Pc	417W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	1.65V
Collector Current (Maximum)	IC	100A
Operating Junction Temperature (Maximum)		175 oC
Collector Capacitance		530
Rise Time		62

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