SG7N06DP IGBT Transistor

The SG7N06DP is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the SG7N06DP transistor as follows.

SG7N06DP Transistor Specification

Transistor Code		SG7N06DP
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO220AB
Collector Power Dissipation (Maximum)	Pc	54W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	1.5V
Collector Current (Maximum)	IC	14A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		50
Rise Time		10

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