STGE50NC60VD IGBT Transistor

The STGE50NC60VD is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the STGE50NC60VD transistor as follows.

STGE50NC60VD Transistor Specification

Transistor Code		STGE50NC60VD
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		ISOTOP
Collector Power Dissipation (Maximum)	Pc	260W
Collector-Emitter Voltage (Maximum)	VCE	600V
Collector-Emitter Saturation Voltage	VCE(on)	1.7V
Collector Current (Maximum)	IC	40A

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