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IQAB75N60D1 IGBT Transistor

The IQAB75N60D1 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IQAB75N60D1 transistor as follows.

Circuit diagram symbol of the IQAB75N60D1 transistor

IQAB75N60D1 Transistor Specification

Transistor Code IQAB75N60D1
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO247
Collector Power Dissipation (Maximum) Pc 300W
Collector-Emitter Voltage (Maximum) VCE 600V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 1.5V
Collector Current (Maximum) IC 75A
Operating Junction Temperature (Maximum) 150 oC
Collector Capacitance 288
Rise Time 36

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