MIXA151W1200EH IGBT Transistor

The MIXA151W1200EH is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the MIXA151W1200EH transistor as follows.

MIXA151W1200EH Transistor Specification

Transistor Code		MIXA151W1200EH
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		APPLICATION
Collector-Emitter Voltage (Maximum)	VCE	1200V
Collector-Emitter Saturation Voltage	VCE(on)	1.8V
Collector Current (Maximum)	IC	220A

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