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MMG300Q060B6R IGBT Transistor

The MMG300Q060B6R is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the MMG300Q060B6R transistor as follows.

Circuit diagram symbol of the MMG300Q060B6R transistor

MMG300Q060B6R Transistor Specification

Transistor Code MMG300Q060B6R
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package MODULE
Collector Power Dissipation (Maximum) Pc 1000W
Collector-Emitter Voltage (Maximum) VCE 600V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 1.95V
Collector Current (Maximum) IC 300A
Operating Junction Temperature (Maximum) 150 oC
Rise Time 80

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