T0510VB45E IGBT Transistor

The T0510VB45E is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the T0510VB45E transistor as follows.

T0510VB45E Transistor Specification

Transistor Code		T0510VB45E
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package
Collector Power Dissipation (Maximum)	Pc	4100W
Collector-Emitter Voltage (Maximum)	VCE	4500V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2.75V
Collector Current (Maximum)	IC	510A
Operating Junction Temperature (Maximum)		125 oC
Rise Time		3300

UXPython is not the creator or an official representative of the T0510VB45E IGBT transistor. You can download the official T0510VB45E IGBT transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in N-Channel IGBT

SKW20N60HS IGBT Transistor MMG100S060B6R IGBT Transistor IXBH5N160G IGBT Transistor SGB02N120 IGBT Transistor IXSH35N120B IGBT Transistor NGTB30N60SWG IGBT Transistor MMIX2S50N60B4D1 IGBT Transistor IHW40T60 IGBT Transistor IXSH25N120A IGBT Transistor GT20G102 IGBT Transistor IXGR50N60B2 IGBT Transistor RJH60M6DPQ-A0 IGBT Transistor SM2G50US60 IGBT Transistor IXBH20N140 IGBT Transistor IRG4BC20U IGBT Transistor F4-100R12KS4 IGBT Transistor MIAA10WF600TMH IGBT Transistor FF225R17ME4_B11 IGBT Transistor IRG4BC30K IGBT Transistor RJH1CF4RDPQ-80 IGBT Transistor