NGTB40N120S IGBT Transistor

The NGTB40N120S is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the NGTB40N120S transistor as follows.

NGTB40N120S Transistor Specification

Transistor Code		NGTB40N120S
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO247
Collector Power Dissipation (Maximum)	Pc	535W
Collector-Emitter Voltage (Maximum)	VCE	1200V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2V
Collector Current (Maximum)	IC	40A
Operating Junction Temperature (Maximum)		175 oC
Collector Capacitance		230
Rise Time		42

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