BT50N60ANF IGBT Transistor

The BT50N60ANF is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the BT50N60ANF transistor as follows.

BT50N60ANF Transistor Specification

Transistor Code		BT50N60ANF
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO3PN
Collector Power Dissipation (Maximum)	Pc	312W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2.5V
Collector Current (Maximum)	IC	50A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		175
Rise Time		49

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