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BT50N60ANF IGBT Transistor

The BT50N60ANF is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the BT50N60ANF transistor as follows.

Circuit diagram symbol of the BT50N60ANF transistor

BT50N60ANF Transistor Specification

Transistor Code BT50N60ANF
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO3PN
Collector Power Dissipation (Maximum) Pc 312W
Collector-Emitter Voltage (Maximum) VCE 600V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 2.5V
Collector Current (Maximum) IC 50A
Operating Junction Temperature (Maximum) 150 oC
Collector Capacitance 175
Rise Time 49

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