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MMG400K120U6TN IGBT Transistor

The MMG400K120U6TN is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the MMG400K120U6TN transistor as follows.

Circuit diagram symbol of the MMG400K120U6TN transistor

MMG400K120U6TN Transistor Specification

Transistor Code MMG400K120U6TN
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package MODULE
Collector Power Dissipation (Maximum) Pc 1925W
Collector-Emitter Voltage (Maximum) VCE 1200V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 1.8V
Collector Current (Maximum) IC 400A
Operating Junction Temperature (Maximum) 150 oC
Rise Time 40

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