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APT50GS60BRDQ2G IGBT Transistor

The APT50GS60BRDQ2G is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the APT50GS60BRDQ2G transistor as follows.

Circuit diagram symbol of the APT50GS60BRDQ2G transistor

APT50GS60BRDQ2G Transistor Specification

Transistor Code APT50GS60BRDQ2G
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO247
Collector Power Dissipation (Maximum) Pc 415W
Collector-Emitter Voltage (Maximum) VCE 600V
Gate-Emitter Voltage (Maximum) VGE 30V
Collector-Emitter Saturation Voltage VCE(on) 3.25V
Collector Current (Maximum) IC 50A
Operating Junction Temperature (Maximum) 150 oC
Collector Capacitance 240
Rise Time 33

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