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NGTB25N120SWG IGBT Transistor

The NGTB25N120SWG is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the NGTB25N120SWG transistor as follows.

Circuit diagram symbol of the NGTB25N120SWG transistor

NGTB25N120SWG Transistor Specification

Transistor Code NGTB25N120SWG
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO247
Collector Power Dissipation (Maximum) Pc 192W
Collector-Emitter Voltage (Maximum) VCE 1200V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 2V
Collector Current (Maximum) IC 25A
Operating Junction Temperature (Maximum) 175 oC
Collector Capacitance 151
Rise Time 74

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