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APTGF150H120 IGBT Transistor

The APTGF150H120 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the APTGF150H120 transistor as follows.

Circuit diagram symbol of the APTGF150H120 transistor

APTGF150H120 Transistor Specification

Transistor Code APTGF150H120
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package
Collector Power Dissipation (Maximum) Pc 1040W
Collector-Emitter Voltage (Maximum) VCE 1200V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 3.3V
Collector Current (Maximum) IC 200A
Operating Junction Temperature (Maximum) 150 oC

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