MIO1500-25E10 IGBT Transistor

The MIO1500-25E10 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the MIO1500-25E10 transistor as follows.

MIO1500-25E10 Transistor Specification

Transistor Code		MIO1500-25E10
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		E10
Collector-Emitter Voltage (Maximum)	VCE	2500V
Collector-Emitter Saturation Voltage	VCE(on)	2.7V
Collector Current (Maximum)	IC	2100A

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