T1500TB25E IGBT Transistor

The T1500TB25E is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the T1500TB25E transistor as follows.

T1500TB25E Transistor Specification

Transistor Code		T1500TB25E
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		MODULE
Collector Power Dissipation (Maximum)	Pc	7800W
Collector-Emitter Voltage (Maximum)	VCE	2500V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2.9V
Collector Current (Maximum)	IC	1500A
Operating Junction Temperature (Maximum)		125 oC

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