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IRG7PH37K10D IGBT Transistor

The IRG7PH37K10D is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IRG7PH37K10D transistor as follows.

Circuit diagram symbol of the IRG7PH37K10D transistor

IRG7PH37K10D Transistor Specification

Transistor Code IRG7PH37K10D
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO247
Collector Power Dissipation (Maximum) Pc 216W
Collector-Emitter Voltage (Maximum) VCE 1200V
Gate-Emitter Voltage (Maximum) VGE 30V
Collector-Emitter Saturation Voltage VCE(on) 1.9V
Collector Current (Maximum) IC 45A
Operating Junction Temperature (Maximum) 150 oC
Collector Capacitance 90
Rise Time 30

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