IXXN200N60B3 IGBT Transistor

The IXXN200N60B3 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXXN200N60B3 transistor as follows.

IXXN200N60B3 Transistor Specification

Transistor Code		IXXN200N60B3
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		SOT227
Collector Power Dissipation (Maximum)	Pc	940W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	1.7V
Collector Current (Maximum)	IC	280A
Operating Junction Temperature (Maximum)		175 oC
Collector Capacitance		570
Rise Time		100

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