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HGT1S3N60A4DS IGBT Transistor

The HGT1S3N60A4DS is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the HGT1S3N60A4DS transistor as follows.

Circuit diagram symbol of the HGT1S3N60A4DS transistor

HGT1S3N60A4DS Transistor Specification

Transistor Code HGT1S3N60A4DS
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO262AB
Collector-Emitter Voltage (Maximum) VCE 600V
Operating Junction Temperature (Maximum) 150 oC

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