IRGSL6B60K IGBT Transistor

The IRGSL6B60K is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IRGSL6B60K transistor as follows.

IRGSL6B60K Transistor Specification

Transistor Code		IRGSL6B60K
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO262
Collector Power Dissipation (Maximum)	Pc	90W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	1.8V
Collector Current (Maximum)	IC	13A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		34
Rise Time		17

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