IXYH60N90C3 IGBT Transistor

The IXYH60N90C3 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXYH60N90C3 transistor as follows.

IXYH60N90C3 Transistor Specification

Transistor Code		IXYH60N90C3
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO247
Collector Power Dissipation (Maximum)	Pc	750W
Collector-Emitter Voltage (Maximum)	VCE	900V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2.7V
Collector Current (Maximum)	IC	140A
Operating Junction Temperature (Maximum)		175 oC
Collector Capacitance		175
Rise Time		77

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