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IXYH60N90C3 IGBT Transistor

The IXYH60N90C3 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXYH60N90C3 transistor as follows.

Circuit diagram symbol of the IXYH60N90C3 transistor

IXYH60N90C3 Transistor Specification

Transistor Code IXYH60N90C3
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO247
Collector Power Dissipation (Maximum) Pc 750W
Collector-Emitter Voltage (Maximum) VCE 900V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 2.7V
Collector Current (Maximum) IC 140A
Operating Junction Temperature (Maximum) 175 oC
Collector Capacitance 175
Rise Time 77

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