AP50G60W-HF IGBT Transistor

The AP50G60W-HF is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the AP50G60W-HF transistor as follows.

AP50G60W-HF Transistor Specification

Transistor Code		AP50G60W-HF
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO247
Collector Power Dissipation (Maximum)	Pc	277W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	30V
Collector-Emitter Saturation Voltage	VCE(on)	3.3V
Collector Current (Maximum)	IC	75A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		160
Rise Time		80

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