STGFW30NC60V IGBT Transistor

The STGFW30NC60V is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the STGFW30NC60V transistor as follows.

STGFW30NC60V Transistor Specification

Transistor Code		STGFW30NC60V
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO3PF
Collector Power Dissipation (Maximum)	Pc	80W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	1.8V
Collector Current (Maximum)	IC	36A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		225
Rise Time		11

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