IRGR2B60KD IGBT Transistor

The IRGR2B60KD is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IRGR2B60KD transistor as follows.

IRGR2B60KD Transistor Specification

Transistor Code		IRGR2B60KD
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO252
Collector Power Dissipation (Maximum)	Pc	35W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	1.95V
Collector Current (Maximum)	IC	6.3A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		17
Rise Time		8.7

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