SMBH1G200US60 IGBT Transistor

The SMBH1G200US60 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the SMBH1G200US60 transistor as follows.

SMBH1G200US60 Transistor Specification

Transistor Code		SMBH1G200US60
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		7PM-BB
Collector-Emitter Voltage (Maximum)	VCE	600V
Collector-Emitter Saturation Voltage	VCE(on)	2.1V
Collector Current (Maximum)	IC	200A
Operating Junction Temperature (Maximum)		150 oC
Rise Time		100

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