SMBH1G200US120 IGBT Transistor

The SMBH1G200US120 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the SMBH1G200US120 transistor as follows.

SMBH1G200US120 Transistor Specification

Transistor Code		SMBH1G200US120
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		7PM-EA
Collector-Emitter Voltage (Maximum)	VCE	1200V
Collector-Emitter Saturation Voltage	VCE(on)	2.4V
Collector Current (Maximum)	IC	200A
Operating Junction Temperature (Maximum)		150 oC
Rise Time		150

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