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SMBH1G200US120 IGBT Transistor

The SMBH1G200US120 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the SMBH1G200US120 transistor as follows.

Circuit diagram symbol of the SMBH1G200US120 transistor

SMBH1G200US120 Transistor Specification

Transistor Code SMBH1G200US120
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package 7PM-EA
Collector-Emitter Voltage (Maximum) VCE 1200V
Collector-Emitter Saturation Voltage VCE(on) 2.4V
Collector Current (Maximum) IC 200A
Operating Junction Temperature (Maximum) 150 oC
Rise Time 150

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