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IHW30N90T IGBT Transistor

The IHW30N90T is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IHW30N90T transistor as follows.

Circuit diagram symbol of the IHW30N90T transistor

IHW30N90T Transistor Specification

Transistor Code IHW30N90T
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO247
Collector-Emitter Voltage (Maximum) VCE 900V
Collector-Emitter Saturation Voltage VCE(on) 1.5V
Collector Current (Maximum) IC 60A

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