IRG4ZH50KD IGBT Transistor

The IRG4ZH50KD is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IRG4ZH50KD transistor as follows.

IRG4ZH50KD Transistor Specification

Transistor Code		IRG4ZH50KD
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		SMD10
Collector Power Dissipation (Maximum)	Pc	210W
Collector-Emitter Voltage (Maximum)	VCE	600V
Collector-Emitter Saturation Voltage	VCE(on)	3.50V
Collector Current (Maximum)	IC	29A
Operating Junction Temperature (Maximum)		150 oC

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