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NGD18N45CLBT4G IGBT Transistor

The NGD18N45CLBT4G is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the NGD18N45CLBT4G transistor as follows.

Circuit diagram symbol of the NGD18N45CLBT4G transistor

NGD18N45CLBT4G Transistor Specification

Transistor Code NGD18N45CLBT4G
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO252
Collector Power Dissipation (Maximum) Pc 115W
Collector-Emitter Voltage (Maximum) VCE 450V
Gate-Emitter Voltage (Maximum) VGE 18V
Collector-Emitter Saturation Voltage VCE(on) 2.07V
Collector Current (Maximum) IC 18A
Operating Junction Temperature (Maximum) 175 oC
Collector Capacitance 72

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