100MT060WDF IGBT Transistor

The 100MT060WDF is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the 100MT060WDF transistor as follows.

100MT060WDF Transistor Specification

Transistor Code		100MT060WDF
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		MTP
Collector Power Dissipation (Maximum)	Pc	462W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	1.98V
Collector Current (Maximum)	IC	83A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		780
Rise Time		47

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