IXBN75N170 IGBT Transistor

The IXBN75N170 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXBN75N170 transistor as follows.

IXBN75N170 Transistor Specification

Transistor Code		IXBN75N170
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		SOT227B
Collector-Emitter Voltage (Maximum)	VCE	1700V
Collector-Emitter Saturation Voltage	VCE(on)	3.1V
Collector Current (Maximum)	IC	145A
Rise Time		440

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