APT25GP90BDQ1G IGBT Transistor

The APT25GP90BDQ1G is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the APT25GP90BDQ1G transistor as follows.

APT25GP90BDQ1G Transistor Specification

Transistor Code		APT25GP90BDQ1G
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO247
Collector Power Dissipation (Maximum)	Pc	417W
Collector-Emitter Voltage (Maximum)	VCE	900V
Gate-Emitter Voltage (Maximum)	VGE	30V
Collector-Emitter Saturation Voltage	VCE(on)	3.9V
Collector Current (Maximum)	IC	72A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		220
Rise Time		16

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