IRG4RC10KD IGBT Transistor

The IRG4RC10KD is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IRG4RC10KD transistor as follows.

IRG4RC10KD Transistor Specification

Transistor Code		IRG4RC10KD
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		D-PAK
Collector Power Dissipation (Maximum)	Pc	38W
Collector-Emitter Voltage (Maximum)	VCE	600V
Collector-Emitter Saturation Voltage	VCE(on)	2.62V
Collector Current (Maximum)	IC	5A
Operating Junction Temperature (Maximum)		150 oC

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