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IXBT32N300 IGBT Transistor

The IXBT32N300 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXBT32N300 transistor as follows.

Circuit diagram symbol of the IXBT32N300 transistor

IXBT32N300 Transistor Specification

Transistor Code IXBT32N300
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO268
Collector-Emitter Voltage (Maximum) VCE 3000V
Collector-Emitter Saturation Voltage VCE(on) 3.2V
Collector Current (Maximum) IC 80A
Rise Time 720

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