IXSX50N60AU1S IGBT Transistor

The IXSX50N60AU1S is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXSX50N60AU1S transistor as follows.

IXSX50N60AU1S Transistor Specification

Transistor Code		IXSX50N60AU1S
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO247SMD
Collector Power Dissipation (Maximum)	Pc	300W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2.7V
Collector Current (Maximum)	IC	75A
Operating Junction Temperature (Maximum)		150 oC
Rise Time		70

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