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IXGQ50N60C4D1 IGBT Transistor

The IXGQ50N60C4D1 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXGQ50N60C4D1 transistor as follows.

Circuit diagram symbol of the IXGQ50N60C4D1 transistor

IXGQ50N60C4D1 Transistor Specification

Transistor Code IXGQ50N60C4D1
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO3P
Collector-Emitter Voltage (Maximum) VCE 600V
Collector-Emitter Saturation Voltage VCE(on) 2.5V
Collector Current (Maximum) IC 90A
Rise Time 63

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