SII100N12 IGBT Transistor

The SII100N12 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the SII100N12 transistor as follows.

SII100N12 Transistor Specification

Transistor Code		SII100N12
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		MODULE
Collector Power Dissipation (Maximum)	Pc	700W
Collector-Emitter Voltage (Maximum)	VCE	1200V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2.5V
Collector Current (Maximum)	IC	145A
Operating Junction Temperature (Maximum)		125 oC
Collector Capacitance		1000
Rise Time		80

UXPython is not the creator or an official representative of the SII100N12 IGBT transistor. You can download the official SII100N12 IGBT transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in N-Channel IGBT

MII150-12A4 IGBT Transistor HGTD10N50F1S IGBT Transistor IKW20N60T IGBT Transistor FD1200R17KE3-K IGBT Transistor DL2G50SH6N IGBT Transistor IXBH42N250 IGBT Transistor SKM200GAX173D IGBT Transistor IXYH30N450HV IGBT Transistor HGT1S11N120CNS IGBT Transistor STGY40NC60VD IGBT Transistor T1600GB45G IGBT Transistor APT80GP60B2 IGBT Transistor IXGM25N100A IGBT Transistor SGL60N90D IGBT Transistor NGTB30N120IHR IGBT Transistor KGT15N120NDS IGBT Transistor APT200GT60JR IGBT Transistor 2E715B IGBT Transistor MMG200DR060UZK IGBT Transistor HGT1S2N120CNDS IGBT Transistor