IRG4MC50F IGBT Transistor

The IRG4MC50F is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IRG4MC50F transistor as follows.

IRG4MC50F Transistor Specification

Transistor Code		IRG4MC50F
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO254AA
Collector Power Dissipation (Maximum)	Pc	150W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2V
Collector Current (Maximum)	IC	35A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		250
Rise Time		25

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