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APTGF200U120D IGBT Transistor

The APTGF200U120D is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the APTGF200U120D transistor as follows.

Circuit diagram symbol of the APTGF200U120D transistor

APTGF200U120D Transistor Specification

Transistor Code APTGF200U120D
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package
Collector Power Dissipation (Maximum) Pc 1136W
Collector-Emitter Voltage (Maximum) VCE 1200V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 3.2V
Collector Current (Maximum) IC 275A
Operating Junction Temperature (Maximum) 150 oC

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