IXGX82N120B3 IGBT Transistor

The IXGX82N120B3 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXGX82N120B3 transistor as follows.

IXGX82N120B3 Transistor Specification

Transistor Code		IXGX82N120B3
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		PLUS247
Collector-Emitter Voltage (Maximum)	VCE	1200V
Collector-Emitter Saturation Voltage	VCE(on)	3.2V
Collector Current (Maximum)	IC	230A
Rise Time		100

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