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IXBJ40N160 IGBT Transistor

The IXBJ40N160 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXBJ40N160 transistor as follows.

Circuit diagram symbol of the IXBJ40N160 transistor

IXBJ40N160 Transistor Specification

Transistor Code IXBJ40N160
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO268
Collector Power Dissipation (Maximum) Pc 350W
Collector-Emitter Voltage (Maximum) VCE 1600V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 6.2V
Collector Current (Maximum) IC 33A
Operating Junction Temperature (Maximum) 150 oC
Collector Capacitance 220
Rise Time 60

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