IRG4BC30S IGBT Transistor

The IRG4BC30S is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IRG4BC30S transistor as follows.

IRG4BC30S Transistor Specification

Transistor Code		IRG4BC30S
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO220AB
Collector Power Dissipation (Maximum)	Pc	100W
Collector-Emitter Voltage (Maximum)	VCE	600V
Collector-Emitter Saturation Voltage	VCE(on)	1.60V
Collector Current (Maximum)	IC	18A
Operating Junction Temperature (Maximum)		150 oC

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