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APTGT50A120D1 IGBT Transistor

The APTGT50A120D1 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the APTGT50A120D1 transistor as follows.

Circuit diagram symbol of the APTGT50A120D1 transistor

APTGT50A120D1 Transistor Specification

Transistor Code APTGT50A120D1
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package
Collector Power Dissipation (Maximum) Pc 270W
Collector-Emitter Voltage (Maximum) VCE 1200V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 1.7V
Collector Current (Maximum) IC 75A
Operating Junction Temperature (Maximum) 150 oC

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