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MWI100-12A8 IGBT Transistor

The MWI100-12A8 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the MWI100-12A8 transistor as follows.

Circuit diagram symbol of the MWI100-12A8 transistor

MWI100-12A8 Transistor Specification

Transistor Code MWI100-12A8
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package APPLICATION
Collector-Emitter Voltage (Maximum) VCE 1200V
Collector-Emitter Saturation Voltage VCE(on) 2.2V
Collector Current (Maximum) IC 160A

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