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IXXH150N60C3 IGBT Transistor

The IXXH150N60C3 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXXH150N60C3 transistor as follows.

Circuit diagram symbol of the IXXH150N60C3 transistor

IXXH150N60C3 Transistor Specification

Transistor Code IXXH150N60C3
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO247
Collector Power Dissipation (Maximum) Pc 1360W
Collector-Emitter Voltage (Maximum) VCE 600V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 2.5V
Collector Current (Maximum) IC 300A
Operating Junction Temperature (Maximum) 175 oC
Collector Capacitance 403
Rise Time 70

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