NGD8201N IGBT Transistor

The NGD8201N is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the NGD8201N transistor as follows.

NGD8201N Transistor Specification

Transistor Code		NGD8201N
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		DPAK-4
Collector Power Dissipation (Maximum)	Pc	125W
Collector-Emitter Voltage (Maximum)	VCE	400V
Collector-Emitter Saturation Voltage	VCE(on)	1.3V
Collector Current (Maximum)	IC	20A

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